1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
600
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
600
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
15N60
15
A
20N60
20
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
15N60
60
A
20N60
80
A
I
AR
T
C
= 25
C
15N60
15
A
20N60
20
A
E
AR
T
C
= 25
C
30
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
300
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
m
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
250
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
15N60
0.50
W
20N60
0.35
W
Pulse test, t
300
m
s, duty cycle d
2 %
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AE (IXFM)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
D
G
V
DSS
I
D25
R
DS(on)
IXFH/IXFM
15
N60
600 V
15 A
0.50
W
IXFH/IXFM
20
N60
600 V
20 A
0.35
W
t
rr
250 ns
91526E (4/99)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
11
18
S
C
iss
4500
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
420
pF
C
rss
140
pF
t
d(on)
20
40
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
43
60
ns
t
d(off)
R
G
= 2
W
(External)
70
90
ns
t
f
40
60
ns
Q
g(on)
151
170
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
29
40
nC
Q
gd
60
85
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
15N60
15
A
20N60
20
A
I
SM
Repetitive;
15N60
60
A
pulse width limited by T
JM
20N60
80
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
T
J
=
25
C
250
ns
T
J
= 125
C
400
ns
Q
RM
T
J
=
25
C
1
m
C
T
J
= 125
C
2
m
C
I
RM
T
J
=
25
C
10
A
T
J
= 125
C
15
A
I
F
= I
S
-di/dt = 100 A/
m
s,
V
R
= 100 V
IXFH 15N60
IXFH 20N60
IXFM 15N60
IXFM 20N60
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AE (IXFM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
- 22.22
- 0.875
C
6.40 11.40
0.252 0.449
D
1.45
1.60
0.057 0.063
E
1.52
3.43
0.060 0.135
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 26.66
0.991 1.050
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
IXFH 15N60
IXFH 20N60
IXFM 15N60
IXFM 20N60
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
-
N
o
r
m
al
i
z
ed
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
Am
per
es
0
5
10
15
20
25
30
35
15N60
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(
on)
-
N
o
r
m
al
i
z
ed
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
5
10
15
20
25
30
35
40
R
DS
(
on)
-
N
o
r
m
al
i
z
ed
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
V
GS
= 10V
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
10
20
30
40
V
DS
- Volts
0
5
10
15
20
I
D
-
Am
per
es
0
10
20
30
40
V
GS(th)
20N60
I
D
= 10A
V
GS
= 15V
V
GS
= 10V
BV
DSS
6V
5V
T
J
= 25C
T
J
= 25C
T
J
= 25C
4 - 4
2000 IXYS All rights reserved
IXFH 15N60
IXFH 20N60
IXFM 15N60
IXFM 20N60
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
Fig.10 Transient Thermal Impedance
V
DS
- Volts
1
10
100
I
D
-
Am
per
es
0.1
1
10
100
Gate Charge - nCoulombs
0
20
40
60
80
100
120
140
V
GE
- V
o
lts
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volts
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
D
-
A
m
per
es
0
10
20
30
40
50
60
70
80
V
CE
- Volts
0
5
10
15
20
25
C
apaci
t
ance -
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Ther
m
a
l
R
e
sp
onse -
K/
W
0.001
0.01
0.1
1
600
D=0.5
C
rss
C
oss
C
iss
V
DS
= 300V
I
D
= 20A
I
G
= 10mA
10s
100s
1ms
10ms
100ms
Limited by R
DS(on)
Single Pulse
f = 1 MHz
V
DS
= 25V
T
J
= 125C
T
J
= 25C
D=0.2
D=0.01
D=0.02
D=0.05
D=0.1
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